Electromigration is a major cause for reliability issues in electronic devices such as semiconductors and microelectronics. This webinar will provide an overview of when and how electromigration failures can be predicted by simulation. We will discuss what equations are solved and how they're implemented in Ansys Mechanical.
Electromigration: Theory and Simulations
This webinar will provide an overview of when and how electromigration failures can be predicted by simulation. We will discuss what equations are solved and how they are implemented in Ansys Mechanical.
The webinar notes are intended to show Ansys users how to make use of advanced functionality in Ansys to be able to solve for failures due to electromigration.
The topics that will be covered in this webinar include:
What is Electromigration?
Electromigration is the physical phenomenon of mass transport in metallization structures (interconnects) when the metallization is subject to stresses induced by high electrical current density.
Electromigration is most significant in applications where current densities are high, such as in microelectronics, semiconductors, etc. As the size of integrated circuits (ICs) decrease and the required circuits remain roughly the same, current densities must increase and the effects of electromigration become more significant.